DocumentCode :
3554196
Title :
The Schottky I2L technology and its application in a 24 × 9 sequential access memory
Author :
Hewlett, F.W., Jr. ; Ryden, W.D.
Author_Institution :
Texas Instruments Inc., Dallas, Texas
fYear :
1976
fDate :
6-8 Dec. 1976
Firstpage :
304
Lastpage :
307
Abstract :
The Schottky I2L device and a two level metal scheme have been used to fabricate a 24×9 sequential access memory. The T2L compatible chip has 1287 Schottky I2L gates, operates at 60mA, and requires an area of 13,200 mil2. Details of the Schottky I2L technology and its application in a 24×9 sequential access memory will be discussed.
Keywords :
Boron; Conductivity; Integrated circuit interconnections; Laboratories; Large scale integration; Schottky diodes; Silicon; Telephony; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Conference_Location :
Washigton, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1976.189043
Filename :
1478755
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3554196
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