Femtosecond white light spectroscopy on symmetrically strained (GaIn)As/Ga(PAs) multiple quantum wells

Author

Sandmann, J.H.H. ; Grosse, S. ; Feldmann, J. ; Lipsanen, H. ; Sopanen, M. ; Tulkki, I. ; Ahopelto, Jouni

Author_Institution

Dept. of Phys., Marburg Univ., Germany

fYear

1996

fDate

7-7 June 1996

Firstpage

61

Lastpage

62

Abstract

Summary form only given. We have performed femtosecond pump and probe experiments using a white light continuum on a series of symmetrically strained InGaAs-GaAsP multiple quantum well (MQW) samples. By changing the In-concentration, the compressive strain in the (GaIn)As layers and thus the energetic splitting between light-hole (Ih) and heavy-hole (hh) states can be varied.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; hole mobility; indium compounds; semiconductor quantum wells; time resolved spectra; (GaIn)As layers; (GaIn)As/Ga(PAs) multiple quantum wells; In-concentration; InGaAs-GaAsP; InGaAs-GaAsP multiple quantum well; compressive strain; energetic splitting; femtosecond pump; femtosecond white light spectroscopy; fs probe experiments; heavy-hole states; high-quality; light-hole states; optical studies; symmetrically strained; time resolved spectra; white light continuum; Cameras; Diodes; Optical pulse generation; Optical pulses; Pulse amplifiers; Pulse measurements; Pump lasers; Spectroscopy; X-ray imaging; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865572