Lifetime control in power rectifiers and thyristors using gold, platinum and electron irradiation

Recombination statistics, based upon a single dominant level, have been used to predict the relative characteristics of gold diffused, platinum diffused, and electron irradiated silicon. These calculations indicate that gold diffused devices will have the best trade-off curve between forward voltage drop and reverse recovery time while exhibiting the highest leakage current levels. The leakage currents of platinum diffused devices are comparable to electron irradiated devices but have a better forward drop-reverse recovery trade-off curve. These calculations have been experimentally verified.