DocumentCode
3554260
Title
Advances in 2-5 micrometer (Hg, Cd)Te photodiodes
Author
Tredwell, T.J.
Author_Institution
Honeywell Inc., Radiation Center, Lexington, Massachusetts
Volume
22
fYear
1976
fDate
1976
Firstpage
545
Lastpage
545
Abstract
Detection of 2-5 micrometer infrared radiation is important both for earth resources and for thermal imaging applications. In this paper we present new results on 2-5µm (Hg, Cd)Te photodiode arrays. 2.1µm photodiodes achieve D* = 6.0 × 1010cm Hz1/2/W at 300K and D* = 5.0 × 1012cm Hz1/2/W at 193K. The photodiodes have surface leakage resistance greater than 1.0 × 1012Ω. The devices display no 1/f noise to less than 0.1 Hz and have response linear in signal power to better than 0.5 percent. Arrays display uniformity of responsivity within ± 3 percent. The diode saturation current is limited by generation-recombination in the depletion layer with an effective lifetime of 6.0 × 10-8sec. 2.7µm photodiodes achieve D*λ = 1.0 × 1010cm Hz1/2/W at 300K and D*λ = 5.0 × 1011cm Hz1/2/W at 193K. 4.8µm photodiodes achieve D*λ = 8.0 × 1010cm Hz1/2/W at 170K and 2.0 × 1012cm Hz1/2/W at 77K and zero background. This paper will present these recent data and compare them with theory.
Keywords
Diodes; Displays; Earth; Infrared detectors; Infrared imaging; Mercury (metals); Optical imaging; Photodiodes; Radiation detectors; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Type
conf
DOI
10.1109/IEDM.1976.189102
Filename
1478814
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