Modelling of V-channel MOS transistor

A physical model of the V-channel MOST is proposed which takes into account a non-uniform redistribution of oxide charge in the V-channel region during the fabrication process. Analysis of the surface potential and threshold voltage along the channel is carried out by a conformal mapping approach. For p-channel devices studied, good agreement has been obtained between the predictions of this model and measured d.c. and gm characteristics. Conclusions are drawn also on the influence of the oxide charge distribution on the characteristics of n-channel V-MOST´s.