Title :
A metallization providing two levels of interconnect for beam leaded silicon integrated circuits
Author :
Ryden, W.D. ; Labuda, E.F. ; van Gelder, W.
Author_Institution :
Bell Telephone Laboratories, Allentown, Pennsylvania
Abstract :
A two level metal structure is described for beam leaded silicon integrated circuits. The two level structure consists of a Ti-Pt first level, plasma deposited silicon nitride as interlevel dielectric, and Ti-Pt-Au as a second level. An example of the application of the structure to a bipolar LSI circuit is presented for the case of a 24 × 9 bit sequential access memory implemented with a Schottky I2L technology.
Keywords :
Conductors; Dielectrics; Integrated circuit interconnections; Integrated circuit metallization; Integrated circuit technology; Large scale integration; Plasma applications; Plasma temperature; Silicon; Telephony;
Conference_Titel :
Electron Devices Meeting, 1976 International
DOI :
10.1109/IEDM.1976.189115
