DocumentCode
3554320
Title
A solid-state DC-DC converter using n-channel MOSFETs
Author
Iñigo, R.M. ; Shafik, T. ; Park, C.W.
Author_Institution
Virginia Univ. Rehabilitation Eng. Center, Charlottesville, VA, USA
fYear
1991
fDate
7-10 Apr 1991
Firstpage
997
Abstract
The authors describe the design, construction, and testing of an all n-channel PWM (pulsewidth modulation) DC-DC converter for electric wheelchair (EW) applications. The circuit requires only three ICs and four power MOSFETs, plus a few passive components. Its efficiency is much higher than that of a previously reported device that used n- and p-channel MOSFETs. The converter is compact, lightweight, and very reliable, owing to the use of ICs and a very low component count
Keywords
insulated gate field effect transistors; power convertors; power transistors; pulse width modulation; PWM; electric wheelchair; n-channel; p-channel; passive components; power MOSFET; pulsewidth modulation; solid-state DC-DC converter; Batteries; DC-DC power converters; MOSFETs; Pulse width modulation; Pulse width modulation converters; Solid state circuits; Space vector pulse width modulation; Switches; Voltage; Wheelchairs;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '91., IEEE Proceedings of
Conference_Location
Williamsburg, VA
Print_ISBN
0-7803-0033-5
Type
conf
DOI
10.1109/SECON.1991.147910
Filename
147910
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