DocumentCode :
3554350
Title :
High power, high frequency epitaxial ASCR
Author :
Smith, P. ; Martin, I. ; Gooen, K.
Author_Institution :
RCA Solid State Division, Somerville, New Jersey
Volume :
23
fYear :
1977
fDate :
1977
Firstpage :
29
Lastpage :
29
Abstract :
The structure of an epitaxial ASCR permits designing for lower turn-on and turn-off switching dissipation with equal or higher blocking capability than a conventional SCR. This reduced dissipation allows higher frequency operation of an inverter or converter, reducing the cost, size and weight, or increasing the power output. The structure of the epitaxial ASCR versus the conventional diffused SCR is shown and its advantages explained. The active area of the device is composed entirely of epitaxial material. Theoretical and experimental voltage breakdowns are compared. Average dissipation as a function of frequency and the frequency derating curve is given. Devices have been made with 800 volt blocking and capable of 50 Ampere operation at 30 kHz.
Keywords :
Costs; Dielectric breakdown; Frequency conversion; Inverters; Solid state circuits; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1977 International
Type :
conf
DOI :
10.1109/IEDM.1977.189150
Filename :
1479230
Link To Document :
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