DocumentCode
3554351
Title
A high gain vertical channel controlled thyristor
Author
Wessels, B.W. ; Baliga, B.J.
Author_Institution
General Electric Company, Schenectady, New York
Volume
23
fYear
1977
fDate
1977
Firstpage
30
Lastpage
37
Abstract
A new vertical channel field controlled thyristor structure is described. This device has a surface grid structure with a high channel length to width aspect ratio which simultaneously allows achieving high blocking gains and fast gate turn-off capability. The devices have the capability of blocking more than 1000 volts with an applied grid bias of 32 volts, and simultaneously exhibiting a low forward voltage drop in the on-state. In addition, the surface grid structure allows gate turn-off capability with a cathode current turn-off time of less than 0.5 microseconds.
Keywords
Anodes; Cathodes; Current measurement; Electrical resistance measurement; Equations; P-i-n diodes; Steady-state; Temperature; Thyristors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189151
Filename
1479231
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