A high gain vertical channel controlled thyristor

A new vertical channel field controlled thyristor structure is described. This device has a surface grid structure with a high channel length to width aspect ratio which simultaneously allows achieving high blocking gains and fast gate turn-off capability. The devices have the capability of blocking more than 1000 volts with an applied grid bias of 32 volts, and simultaneously exhibiting a low forward voltage drop in the on-state. In addition, the surface grid structure allows gate turn-off capability with a cathode current turn-off time of less than 0.5 microseconds.