Title :
Comparison of MOS-gate protection networks
Author :
Six, Paul ; Sansen, Willy ; Maes, Herman
Author_Institution :
Kath. Univ. Leuven, HEVERLEE, Belgium
Abstract :
Field-plated diodes, Punch-Through and Reach-Through devices and a new kind of Implanted Zener Diode have been studied with regard to their current sinking capability for use as protection devices of MOST gates. All conventionaly used protections show some drawbacks. The Implanted Zener Diodes feature a tightly controlled breakdown voltage, low dynamic resistance and no walk-out effects.
Keywords :
Diodes; Electrical resistance measurement; Integrated circuit layout; Integrated circuit measurements; MOSFETs; Protection; Secondary generated hot electron injection; Substrate hot electron injection; Time measurement; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189192
