High speed I2L fabricated with electron-beam lithography and ion implantation

Integrated injection logic gates have been fabricated using electron-beam lithography and ion implantation. A factor of five reduction in gate area over conventional designs was achieved by using minimum line widths of 1.25 µm. An average propagation delay of 6 ns at 100 µA/gate injector current and speed-power product of .13 pJ at 5 µA have been measured on five collector, stick geometry, N⁺guard ring device structures. The delay time is a factor of three and the speed-power product is a factor of five better than conventionally sized structures fabricated with photolithography. A minimum delay of 3.6 ns has been measured on five collector device structures designed for maximum speed.