• DocumentCode
    3554473
  • Title

    MM-Wave pin switching diode fabrication using silicon molecular beam epitaxy

  • Author

    Ota, Y. ; Buchanan, W.L. ; Peterson, O.G.

  • Author_Institution
    Bell Telephone Laboratories, Reading, Pa.
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    375
  • Lastpage
    378
  • Abstract
    A Molecular Beam Epitaxial (MBE) system was used to grow both lightly doped n and p silicon epitaxy on heavily doped n+substrates. An epitaxial grown p-n junction was formed in the latter material. The high quality of the epitaxy and its practical application was demonstrated by the successful fabrication of millimeter-wave switching diodes.
  • Keywords
    Conductivity; Diodes; Doping; Epitaxial growth; Epitaxial layers; Fabrication; Molecular beam epitaxial growth; Silicon; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189263
  • Filename
    1479343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554473