DocumentCode :
3554487
Title :
Safe method of designing of power transistors circuits with forward second breakdown taken into consideration
Author :
Pióro, Zbigniew
Author_Institution :
Warsaw Technical University, Warsaw, Poland
Volume :
23
fYear :
1977
fDate :
1977
Firstpage :
420
Lastpage :
422
Abstract :
In this paper the results of studies of second breakdown phenomenon in bipolar transistors are presented. Along with this a new feature of second breakdown phenomenon and new method of designing of electronic power circuits based on this feature is discussed.
Keywords :
Circuit testing; Delay effects; Design methodology; Electric breakdown; Power transistors; Pulse circuits; Pulse shaping methods; Shape; Space vector pulse width modulation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1977 International
Type :
conf
DOI :
10.1109/IEDM.1977.189276
Filename :
1479356
Link To Document :
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