• DocumentCode
    3554504
  • Title

    Photoconductivity in LPE GaP:Cu

  • Author

    Petersen, Paul E. ; Schulze, Richard G.

  • Author_Institution
    Honeywell Corporate Materials Sciences Center, Bloomington, MN
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    469
  • Lastpage
    471
  • Abstract
    The photoconductive properties of copper doped LPE GaP have been investigated. The photoresponse of as-grown surfaces extends from 2.2 to 5.0 eV. Photoconductive gains as high as 105have been measured. The photoconductive response time to low levels of illumination is typically a few milliseconds and the spatial uniformity of the photosignal is less than 10% over distances of 3 mm. The photomechanism has been investigated by optical quenching and by study of the variation in photosignal with photon flux. These data are interpretable with the sensitized photoconductivity model.
  • Keywords
    Copper; Crystalline materials; Energy measurement; Gain measurement; Lighting; Photoconducting materials; Photoconductivity; Photonic crystals; Response surface methodology; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189291
  • Filename
    1479371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554504