Title :
Photoconductivity in LPE GaP:Cu
Author :
Petersen, Paul E. ; Schulze, Richard G.
Author_Institution :
Honeywell Corporate Materials Sciences Center, Bloomington, MN
Abstract :
The photoconductive properties of copper doped LPE GaP have been investigated. The photoresponse of as-grown surfaces extends from 2.2 to 5.0 eV. Photoconductive gains as high as 105have been measured. The photoconductive response time to low levels of illumination is typically a few milliseconds and the spatial uniformity of the photosignal is less than 10% over distances of 3 mm. The photomechanism has been investigated by optical quenching and by study of the variation in photosignal with photon flux. These data are interpretable with the sensitized photoconductivity model.
Keywords :
Copper; Crystalline materials; Energy measurement; Gain measurement; Lighting; Photoconducting materials; Photoconductivity; Photonic crystals; Response surface methodology; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189291
