Title :
Temperature-sensitive switching device thermosenstor
Author :
Nakata, J. ; Sogo, T. ; Yamanaka, K. ; Mihashi, Y. ; Shirahata, K.
Author_Institution :
Mitsubishi Electric Corporation, Itami, Japan
Abstract :
A p-n-p-n temperature-sensitive switching device "Thermosenstor" operatable in the temperature range of -30°C to 150°C has been developed by implanting argon ion to the collector junction of the p-n-p-n structure. Argon ion implantation also permits the device to be less sensitive to the dV/dt triggering as well as to eliminate the on-off switching temperature differential. The construction, characteristics and reliability are described.
Keywords :
Argon; Ion implantation; Lattices; Leakage current; P-n junctions; Silicon; Temperature dependence; Temperature sensors; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189294
