Ultralow threshold current 780-nm vertical-cavity surface-emitting lasers with oxide current aperture

Author

Hyun-Eoi Shin ; Yung-Gu Zoo ; Yong-Hee Lee

Author_Institution

Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

fYear

1996

fDate

7-7 June 1996

Firstpage

84

Abstract

Summary form only given. Vertical cavity surface-emitting lasers (VCSELs) operating at 780 nm usually have AlAs-GaAs superlattice active region, but no good performance is reported yet. We demonstrate the new type of 780 nm VCSELs having AlGaAs DBR quantum wells (QWs) as the active medium. Oxide aperture is located just above the active region for efficient current confinement.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; infrared sources; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 780 nm; AlGaAs; AlGaAs DBR quantum well lasers; QW active medium; VCSELs; efficient current confinement; nm vertical-cavity surface-emitting lasers; oxide aperture; oxide current aperture; superlattice active region; ultralow threshold current; Apertures; Distributed Bragg reflectors; Performance gain; Quantum well lasers; Surface emitting lasers; Temperature dependence; Temperature distribution; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865600