Title :
Ultralow threshold current 780-nm vertical-cavity surface-emitting lasers with oxide current aperture
Author :
Hyun-Eoi Shin ; Yung-Gu Zoo ; Yong-Hee Lee
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
Summary form only given. Vertical cavity surface-emitting lasers (VCSELs) operating at 780 nm usually have AlAs-GaAs superlattice active region, but no good performance is reported yet. We demonstrate the new type of 780 nm VCSELs having AlGaAs DBR quantum wells (QWs) as the active medium. Oxide aperture is located just above the active region for efficient current confinement.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; infrared sources; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 780 nm; AlGaAs; AlGaAs DBR quantum well lasers; QW active medium; VCSELs; efficient current confinement; nm vertical-cavity surface-emitting lasers; oxide aperture; oxide current aperture; superlattice active region; ultralow threshold current; Apertures; Distributed Bragg reflectors; Performance gain; Quantum well lasers; Surface emitting lasers; Temperature dependence; Temperature distribution; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
