DocumentCode
3554517
Title
Modeling, fabrication and performance of ion implanted low-noise GaAs FETs
Author
Higgins, J.A. ; Kuvas, R.L. ; Ch´en, D.R.
Author_Institution
Rockwell International, Thousand Oaks, California
Volume
23
fYear
1977
fDate
1977
Firstpage
506
Lastpage
509
Keywords
Annealing; Circuit testing; Doping profiles; Fabrication; Frequency; Gallium arsenide; Ion implantation; Microwave FETs; Noise figure; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189303
Filename
1479383
Link To Document