DocumentCode
3554539
Title
Novel double-heterostructure lasers
Author
SpringThorpe, A.J. ; Rider, Marcos J. ; Rider, M.J.
Author_Institution
Bell-Northern Research, Ottawa, Ontario, Canada
Volume
23
fYear
1977
fDate
1977
Firstpage
571
Lastpage
574
Abstract
In this paper we describe the preparation and characterization of two novel kinds of double-heterostructure (DH) lasers which combine both the Burrus LED and oxide-stripe laser technologies. Laser emission from one of the devices (Type I) emerges from a pair of holes which are etched through the substrate to expose the n-GaAlAs first confining layer. The n-GaAlAs/air interface forms the mirrors of the resonant optical cavity and the laser emission is perpendicular to the gain region, (active layer of the DH). In the second device (Type II) the resonant cavity is formed between the n-GaAlAs/air interface and a
Keywords
Chemical lasers; DH-HEMTs; Etching; Low earth orbit satellites; Mirrors; P-n junctions; Quantum well lasers; Resonance; Stimulated emission; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189323
Filename
1479403
Link To Document