• DocumentCode
    3554540
  • Title

    Low-threshold room-temperature Ga(1-x)AlxAs/GaAs lasers grown by metalorganic chemical vapor deposition

  • Author

    Dupuis, R.D. ; Dapkus, P.D. ; Moudy, L.A.

  • Author_Institution
    Rockwell International, Anaheim, CA
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    575
  • Lastpage
    576
  • Abstract
    Low-threshold room-temperature Ga(1-x)AlxAs/ GaAs double heterostructure lasers have been grown by the metalorganic chemical vapor deposition process. Studies have been made of the dependence of Jth upon the active layer thickness, d, and the mole fraction of Al, x, in the confinement layers. Values of Jth as low as 630A/cm2have been achieved for d ∼ 540Å and x ∼ 0.5.
  • Keywords
    Chemical lasers; Chemical vapor deposition; DH-HEMTs; Doping; Gallium arsenide; Inductors; Molecular beam epitaxial growth; Pulse measurements; Substrates; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189324
  • Filename
    1479404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554540