• DocumentCode
    3554542
  • Title

    Optically-switched PNPN light-emitting diodes

  • Author

    Copeland, J.A. ; Dentai, A.G. ; Lee, T.P.

  • Author_Institution
    Bell Laboratories, Holmdel, New Jersey
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    580
  • Lastpage
    581
  • Abstract
    Light-emitting diodes with the high-radiance Burrus configuration have been made with an internal PNPN structure which causes an S-type negative resistance. The devices were double heterostructures using InGaAsP material. By using the proper external load impedance and bias voltage, the negative resistance can be used to obtain bistable operation with switching from low current to high current triggered by a small current (e.g. 1 µA). Light coupled into the center junction can be used as the source of Signal current. Triggering has been achieved with a 3 µW light pulse.
  • Keywords
    Electrical resistance measurement; Glass; Laboratories; Light emitting diodes; Optical attenuators; Optical bistability; Optical coupling; Optical fiber devices; Switches; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189326
  • Filename
    1479406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554542