Title :
Realization of a 65K dynamic RAM device making exclusive use of VMOS transistors
Author :
von Basse, P.-W. ; Edwards, D.G. ; Essl, D.V. ; Hofmann, R. ; Losehand, R.
Author_Institution :
Siemens A.G., Munich, Germany
Abstract :
A VMOS RAM, implemented without planar transistors requires only 6 mask steps instead of 7 and offers more options in process optimization, for example in the selection of the doping concentrations.
Keywords :
Area measurement; Circuit testing; DRAM chips; Decoding; Doping; Failure analysis; Random access memory; Read-write memory; Semiconductor device measurement; Timing;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189328
