Title :
The design and fabrication of InxGa1-xAs Schottky barrier mixer diodes for space based heterodyne receivers
Author :
Brennan, T.A. ; Mattauch, R.J.
Author_Institution :
Semicond. Device Lab., Virginia Univ., Charlottesville, VA, USA
Abstract :
The difficulty in obtaining substantial local oscillator (LO) power at very high frequencies places an upper limit on the frequency range of heterodyne receiver systems. LO power can be reduced by using two diodes in an antiparallel configuration, but this requires the diodes to have low turn-on voltages. The design of an InxGa 1-xAs Schottky barrier mixer diode with a turn-on voltage of less than 0.6 eV is presented here. Properties of the InxGa 1-xAs material system which make it attractive for use with high-frequency devices are examined, and the dominant current mechanism for various doping levels and values of x (In mole fraction) is determined. A first-order analysis of the RF performance is presented, followed by a discussion of the fabrication procedure and initial results
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; mixers (circuits); radio receivers; GaAs substrate; InxGa1-xAs; RF performance; Schottky barrier mixer diodes; design; dominant current mechanism; doping levels; fabrication; first-order analysis; high-frequency devices; local oscillator power; space based heterodyne receivers; turn-on voltage; Cutoff frequency; Fabrication; Gallium arsenide; Local oscillators; Mixers; Schottky barriers; Schottky diodes; Semiconductor diodes; Space technology; Voltage;
Conference_Titel :
Southeastcon '91., IEEE Proceedings of
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-0033-5
DOI :
10.1109/SECON.1991.147976
