Title :
Fabrication and performance of submicron silicon MESFET
Author :
Darley, H.M. ; Houston, T.W. ; Taylor, G.W.
Author_Institution :
Texas Instruments, Incorporated, Dallas, Texas
Abstract :
Micron and submicron gate length silicon MESFET devices and circuits have been successfully fabricated using electron beam direct slice writing and a newly developed high density structure which self-aligns the active channel, source-drain, and contacts to the field oxide. Device characteristics of 1/4, 3/4, and 1 micron gate lengths show good square law behavior. In addition, measurements of 15-stage enhancement logic ring oscillators with 1 micron gate lengths show switching speeds of 1 to 2 nanoseconds with speed-power products of 1 to 5 femto Joules.
Keywords :
Fabrication; Implants; Instruments; Logic devices; MESFETs; Metallization; Ring oscillators; Silicon; Temperature; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189352