DocumentCode
3554617
Title
InGaAsP/InP photodiodes: Microplasma-limited avalanche multiplication at 1.0 to 1.3 µm wavelength
Author
Lee, T.P. ; Burrus, C.A. ; Dentai, A.G.
Author_Institution
Bell Laboratories, Holmdel, New Jersey
fYear
1978
fDate
4-6 Dec. 1978
Firstpage
112
Lastpage
115
Abstract
Experiments with photodiodes for use in the 1 to 1.3 µm wavelength region, fabricated from LPE double-heterostructure InGaAsP/InP wafers, have shown that the avalanche multiplication in mesa-configuration devices was limited to values of 10 or less. The results of careful measurement of the photoresponse, quantum efficiency and reverse-bias I-V characteristics suggest that the gain was limited by microplasma breakdown.
Keywords
Alloying; Diodes; Electric breakdown; Indium phosphide; Laboratories; P-n junctions; Photodiodes; Radiative recombination; Substrates; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Conference_Location
Washigton, DC, USA
Type
conf
DOI
10.1109/IEDM.1978.189365
Filename
1479790
Link To Document