DocumentCode
3554636
Title
A new self-aligning contact process for MOS LSI
Author
Muramoto, Susumu ; Hosoya, Tetsuo ; Matsuo, Seitaro
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
24
fYear
1978
fDate
1978
Firstpage
185
Lastpage
188
Abstract
A new Self-Aligning Contact (SAC) process which forms high density contact holes and flat device surface is proposed. Several new techniques which are necessary for the SAC process are established. Especially, a plasma-reactive-sputter etching technique makes it easy to etch double layered nitride and polysilicon. The potentiality of the SAC process to the future fine pattern MOS LSI process is verified by the good yield and high performance of the fabricated 1K RAM.
Keywords
Fabrication; Large scale integration; Oxidation; Plasma applications; Plasma chemistry; Plasma devices; Plasma properties; Resists; Silicon; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189383
Filename
1479808
Link To Document