DocumentCode :
3554671
Title :
Injection efficiency in bipolar devices
Author :
Heasell, E.L.
Author_Institution :
University of Waterloo, Waterloo, Ontario, Canada
Volume :
24
fYear :
1978
fDate :
1978
Firstpage :
310
Lastpage :
311
Abstract :
The influence of impurity deionisation in the emitter of a bipolar device is examined. It is shown that most of the effects usually attributed to band-gap narrowing, can be adequately explained by an unperturbed band (impurity model).
Keywords :
Current measurement; Electrostatics; Gain measurement; Impurities; Integral equations; Photonic band gap; Reflection; Statistics; Tail; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1978 International
Type :
conf
DOI :
10.1109/IEDM.1978.189415
Filename :
1479840
Link To Document :
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