DocumentCode
3554671
Title
Injection efficiency in bipolar devices
Author
Heasell, E.L.
Author_Institution
University of Waterloo, Waterloo, Ontario, Canada
Volume
24
fYear
1978
fDate
1978
Firstpage
310
Lastpage
311
Abstract
The influence of impurity deionisation in the emitter of a bipolar device is examined. It is shown that most of the effects usually attributed to band-gap narrowing, can be adequately explained by an unperturbed band (impurity model).
Keywords
Current measurement; Electrostatics; Gain measurement; Impurities; Integral equations; Photonic band gap; Reflection; Statistics; Tail; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189415
Filename
1479840
Link To Document