The SIS tunnel emitter

Silicon npn transistors with emitters consisting of a polycrystalline and a monocrystalline region with a thin (20-60 Å) interfacial layer in between have a high efficiency and a current gain with low positive or even negative temperature coefficient. This paper proposes a model based on tunneling through and band bending at the interfacial layer. The tunnel probability turns out to be 10^-2to 10^-3, the barrier height is about 100 mV and the band bending some 40 to 90 mV.