Title :
A 2K × 8-bit static RAM
Author :
Ohzone, T. ; Hirao, Takami ; Tsuji, Keita ; Horiuchi, S. ; Takayanagi, S.
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Osaka, Japan
Abstract :
High density 2K×8-bit fully static RAM has been developed. Memory cell size of 23×27µm results in the chip size of 3.75×4.19mm, which is nearly equal to that of existing 4K-bit static RAM´s. High packing density is realized by layout of 3µm photolithography and double-level polysilicon process permitting fabrication of memory load resistors upon driver MOSFET´s.
Keywords :
Circuits; Fabrication; Flip-flops; Power dissipation; Random access memory; Read-write memory; Resistors; Silicon; Threshold voltage; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1978 International
Conference_Location :
Washigton, DC, USA
DOI :
10.1109/IEDM.1978.189428
