DocumentCode

3554687

Title

Ion implanted GaAs power FETs

Author

Immorlica, A.A. ; Higgins, J.A. ; Hill, W. ; Robinson, G. ; Kuvas, R.L.

Author_Institution

Rockwell International/Science Center, Thousand Oaks, California

Volume

24

fYear

1978

fDate

1978

Firstpage

368

Lastpage

372

Keywords

Capacitance; FETs; Fabrication; Gallium arsenide; Implants; Ion implantation; Linearity; Material properties; Ohmic contacts; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1978 International

Type

conf

DOI

10.1109/IEDM.1978.189430

Filename

1479855