Title :
Ion implanted GaAs power FETs
Author :
Immorlica, A.A. ; Higgins, J.A. ; Hill, W. ; Robinson, G. ; Kuvas, R.L.
Author_Institution :
Rockwell International/Science Center, Thousand Oaks, California
Keywords :
Capacitance; FETs; Fabrication; Gallium arsenide; Implants; Ion implantation; Linearity; Material properties; Ohmic contacts; Voltage;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189430
