Title :
Design criteria for GaAs MESFETs related to stationary high field domains
Author :
Shur, M.S. ; Eastman, L.F. ; Judraprawira, S. ; Gammel, J. ; Tiwari, J.
Author_Institution :
Oakland University, Rochester, MI
Abstract :
An experimental evidence of the Gunn domain formation at the drain side of the gate based on the studies of the photoconductivity response of GaAs MESFETs is presented. A new set of design critera based on the modified theory of high-field domains is derived and optimum device parameters are estimated.
Keywords :
Breakdown voltage; Current-voltage characteristics; Electron mobility; Gallium arsenide; Gunn devices; Laser beams; MESFETs; Optical saturation; Parameter estimation; Photoconductivity;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189433
