Title :
The temperature effect on sequential resonant tunneling in single bound state multiple-quantum-well structure
Author :
Yuanjian Xu ; Shakouri, Ali ; Yariv, Amnon
Author_Institution :
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Summary form only given. The nonuniform electric field distribution in voltage-biased multiple-quantum-well (MQW) structure resulting from sequential resonant tunneling (SRT) causes discontinuity in the current-voltage characteristics, and is a mainly low temperature effect. In this talk we discuss the temperature dependence of SRT and the electric field distribution in GaAs MQWs.
Keywords :
electro-optical effects; gallium arsenide; semiconductor quantum wells; tunnelling; GaAs; GaAs MQWs; current-voltage characteristics; electric field distribution; low temperature effect; multiple-quantum-well structure; nonuniform electric field distribution; sequential resonant tunneling; single bound state; temperature dependence; temperature effect; voltage-biased multiple-quantum-well structure; Autocorrelation; Laser transitions; Laser tuning; Pulse measurements; Quantum well devices; Resonance; Resonant tunneling devices; Solids; Temperature; Voltage;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
