• DocumentCode
    3554700
  • Title

    Schottky barrier photodiodes in Hg1-xCdxTe

  • Author

    Polla, D.L. ; Sood, A.K.

  • Author_Institution
    Honeywell Electro-Optics Center, Lexington, Massachusetts
  • Volume
    24
  • fYear
    1978
  • fDate
    1978
  • Firstpage
    419
  • Lastpage
    420
  • Abstract
    Schottky Barrier photodiodes have been fabricated on p-Hg1-xCdxTe (0.20≤ × ≤ 0.38) with aluminum, chromium, lead and manganese as barrier metals. Various electrical characterizations have been carried out to determine barrier heights and the results are found to be in excellent agreement with theory. These photodiodes have also been used to determine the minority carrier lifetime and diffusion length in p-Hg1-xCdxTe.
  • Keywords
    Charge carrier lifetime; Chromium; Current measurement; Infrared detectors; Manganese; Mercury (metals); Photodiodes; Schottky barriers; Schottky diodes; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1978 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1978.189443
  • Filename
    1479868
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554700