• DocumentCode
    3554703
  • Title

    Wide bandwidth 10.6 µm (Hg,Cd)Te photodiodes for infrared heterodyne applications

  • Author

    Shanley, J.F. ; Perry, L.C.

  • Author_Institution
    Honeywell, Electro-Optics Center, Lexington, Massachusetts
  • fYear
    1978
  • fDate
    4-6 Dec. 1978
  • Firstpage
    424
  • Lastpage
    429
  • Abstract
    This paper reports the lowest noise equivalent power (NEP), approximately 6.2 × 10-20watts/Hz, ever measured for 10.6 µm n+-n--p+(Hg,Cd)Te photodiodes at a frequency of 1750 MHz and at 77 K, as determined by blackbody heterodyne radiometry techniques (1-3). This value of NEP corresponds to an effective heterodyne quantum efficiency of 30%. The devices were fabricated by means of planar processing techniques and capacitance-voltage measurements revealed that the junctions were abrupt and contained a donor concentration in the n-layer of approximately 4.0 × 1014to 1.0 × 1015cm-3.
  • Keywords
    Bandwidth; Capacitance measurement; Capacitance-voltage characteristics; Extraterrestrial measurements; Frequency measurement; Infrared detectors; Least squares approximation; Photodiodes; Power lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1978 International
  • Conference_Location
    Washigton, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1978.189445
  • Filename
    1479870