• DocumentCode
    3554705
  • Title

    High performance junction photodiodes for 8-14 µm (Hg,Cd)Te infrared imaging applications

  • Author

    Sood, A.K. ; Tredwell, T.J.

  • Author_Institution
    Honeywell Electro-Optics Center, Lexington, Massachusetts
  • fYear
    1978
  • fDate
    4-6 Dec. 1978
  • Firstpage
    434
  • Lastpage
    436
  • Abstract
    Fabrication of n+-p junction photodiodes by boron implantation have been carried out in 8-12 µm p-Hg0.8Cd0.2Te. These photodiodes exhibit quantum efficiencies and D*λ(1 kHz, 180° FOV, 300 K) in excess of 0.6 and 2.0 × 1010cm√Hz/W. Measurements of the resistance area product (RoAj) as a junction of temperature between 77 and 200 K demonstrate that the current in these photodiodes is diffusion limited down to 77 K.
  • Keywords
    Annealing; Area measurement; Boron; Contracts; Current measurement; Fabrication; Implants; Infrared imaging; Photodiodes; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1978 International
  • Conference_Location
    Washigton, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1978.189447
  • Filename
    1479872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554705