High performance junction photodiodes for 8-14 µm (Hg,Cd)Te infrared imaging applications

Fabrication of n⁺-p junction photodiodes by boron implantation have been carried out in 8-12 µm p-Hg0.8Cd0.2Te. These photodiodes exhibit quantum efficiencies and D*λ(1 kHz, 180° FOV, 300 K) in excess of 0.6 and 2.0 × 10¹⁰cm√Hz/W. Measurements of the resistance area product (RoAj) as a junction of temperature between 77 and 200 K demonstrate that the current in these photodiodes is diffusion limited down to 77 K.