• DocumentCode
    3554717
  • Title

    A model of punchthrough current in short-channel MOSFETs, from low to high injection levels

  • Author

    Merckel, Gérard ; Gautier, Jacques

  • Author_Institution
    CEA-CENG LETI/MEA, Grenoble Cedex, France
  • Volume
    24
  • fYear
    1978
  • fDate
    1978
  • Firstpage
    476
  • Lastpage
    477
  • Abstract
    It has been demonstrated that punchthrough operation of short-channel MOSFETs can be usefull for circuit applications [1][2]. The models which are generally used are valid either at low [1], or medium injection levels [3][4]. In this paper we present a model which describes the behavior of punchthrough current versus applied voltage, from low to high injection levels.
  • Keywords
    Circuits; Current density; Doping; Length measurement; Low voltage; MOSFETs; Niobium; Poisson equations; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1978 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1978.189458
  • Filename
    1479883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554717