Title :
Short channel effects in dual gate field effect transistors
Author :
Noble, Wendell P., Jr.
Author_Institution :
IBM General Technology Division, Essex Junction, VT
Abstract :
The behavior of short channel dual gate FETs has been experimentally characterized and modeled using a numerical two dimensional simulation. The modeled results agree very well with the experiment and are used to understand the interaction of applied voltages with channel length. Comparison is made to modeled and experimental short channel behavior on single gate FETs with junction depth as a parameter.
Keywords :
Charge carrier processes; Computational modeling; Electric resistance; FETs; Geometry; Lapping; Large scale integration; Numerical models; Numerical simulation; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189460
