Title :
Room-temperature luminescence and stimulated UV emission from ZnO thin films
Author :
Yu, Paul ; Tang, Z.K. ; Wong, G.K.L. ; Segawa, Yuji ; Kawasaki, M.
Author_Institution :
Dept. of Phys., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
Abstract :
Summary form only given. The luminescence properties of wideband-gap II-VI semiconductors is currently of considerable interest because of their relevance to the development of short-wavelength diode lasers, which are needed in many areas of high-tech applications. The availability of high-quality MBE-grown ZnSe-based semiconductor heterostructures have made possible observation of strong room-temperature luminescence as well as fabrication of blue and blue-green laser diodes. We report here what we believe is the first observation of strong room-temperature luminescence and stimulated emission from high-quality ZnO thin films.
Keywords :
molecular beam epitaxial growth; optical fabrication; optical films; optical pumping; photoluminescence; semiconductor growth; stimulated emission; zinc compounds; ZnO; ZnO thin films; ZnSe; ZnSe-based semiconductor heterostructures; blue-green laser diodes; high-quality MBE-grown; high-quality ZnO thin films; luminescence properties; room-temperature luminescence; short-wavelength diode lasers; stimulated UV emission; stimulated emission; strong room-temperature luminescence; wideband-gap II-VI semiconductors; Diode lasers; Excitons; Luminescence; Photonic band gap; Plasma temperature; Semiconductor thin films; Stimulated emission; Temperature dependence; Transistors; Zinc oxide;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0