DocumentCode :
355474
Title :
Electronic Raman coherence in GaAs: state-specific scattering processes
Author :
Ferrio, K.B. ; Guest, J.R. ; Steel, D.G.
Author_Institution :
Randall Lab. of Phys., Michigan Univ., Ann Arbor, MI, USA
fYear :
1996
fDate :
7-7 June 1996
Firstpage :
103
Abstract :
Summary form only given. Quantum beats probe energy gaps and coherences, including the nonradiative Raman correlation between the light- and heavy-hole valence bands. A recent analysis of quantum beats in four-wave mixing (FWM) in a multiple-quantum well (MQW) illustrates the potential of this technique. We have demonstrated the existence of a Raman coherence, independent of polarization beats. The fast decay and polarisation dependence reveal strongly state specific scattering and spin independent interactions.
Keywords :
Raman spectra; conduction bands; gallium arsenide; high-speed optical techniques; light coherence; light polarisation; multiwave mixing; optical correlation; quantum beat spectra; GaAs; Raman coherence; coherences; electronic Raman coherence; energy gaps; fast decay; four-wave mixing; heavy-hole valence bands; light-hole valence bands; multiple-quantum well; nonradiative Raman correlation; polarisation dependence; polarization beats; quantum beats; spin independent interactions; state-specific scattering processes; strongly state specific scattering; Coherence; Delay; Excitons; Gallium arsenide; Geometrical optics; Light scattering; Particle scattering; Polarization; Quantum well devices; Raman scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
Type :
conf
Filename :
865625
Link To Document :
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