DocumentCode :
3554745
Title :
Self aligned CMOS processing with Rh and Ag L line sources
Author :
Peckerar, M.C. ; Taylor, C.J. ; Blais, P.D.
Author_Institution :
Westinghouse Electric Corporation, Baltimore
Volume :
24
fYear :
1978
fDate :
1978
Firstpage :
588
Lastpage :
590
Abstract :
CMOS processing with x-ray lithography is reviewed. X-ray source selection, resist handling techniques and dry etching methods are discussed. The problem of photo electron spreading in PBS is also discussed. Slope of the resist side wall is shown to be a more serious problem in limiting resolution.
Keywords :
Annealing; CMOS process; Costs; Dry etching; Electromagnetic wave absorption; Electrons; Laboratories; Resists; Silver; X-ray lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1978 International
Type :
conf
DOI :
10.1109/IEDM.1978.189484
Filename :
1479909
Link To Document :
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