Title :
High speed GaAs CCD
Author :
Deyhimy, I. ; Harris, J.S. ; Eden, R.C. ; Edwall, D.D. ; Anderson, R.J.
Author_Institution :
Rockwell International Science Center, Thousand Oaks, California
Abstract :
A GaAs CCD with high transfer efficiency is described and implications for high speed devices fabricated with this technology are described.
Keywords :
Bandwidth; Charge coupled devices; Charge transfer; Clocks; FETs; Frequency; Gallium arsenide; Integrated circuit technology; Power dissipation; Silicon;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189493
