Title :
GaInAsP/InP lasers and detectors for fiber optics communications at 1.1-1.3 µm
Author_Institution :
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts
Abstract :
Diode lasers and avalanche diodes of GaInAsP/InP are under development for the 1.1-1.3 µm wavelength region of current interest for fiber optics applications. Early versions of both of these devices show highly promising performance characteristics. Current state-of-the-art results, as well as a description of the device structures, will be presented.
Keywords :
Diode lasers; Fiber lasers; Indium phosphide; Optical detectors; Optical fiber communication; Optical fibers; Optical films; Photonic band gap; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1978 International
Conference_Location :
Washigton, DC, USA
DOI :
10.1109/IEDM.1978.189496
