DocumentCode
3554769
Title
A 600 volt MOSFET with near ideal on resistance
Author
Temple, V.A.K. ; Love, R.P.
Author_Institution
General Electric Company, Schenectady, New York
Volume
24
fYear
1978
fDate
1978
Firstpage
664
Lastpage
666
Abstract
Two experimental 600 Volt power MOSFETs with a vertical source-drain geometry have been fabricated for megahertz power control applications. These devices are similar in design, differing chiefly in current capability. Both devices feature a unique use of ion implant for near ideal breakdown voltage and an intentionally large gate-drain overlap region to reduce device on-resistance at the expense of a lower frequency response.
Keywords
Breakdown voltage; Electric breakdown; Electric resistance; Frequency response; Geometry; Implants; MOSFET circuits; Power MOSFET; Power control; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189506
Filename
1479931
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