DocumentCode :
3554772
Title :
Bipolar mode static induction transistor (BSIT) - High speed switching device
Author :
Nishizawa, J. ; Ohmi, Tadahiro ; Mochida, Y. ; Matsuyama, Takashi ; Iida, S.
Author_Institution :
Tohoku University, Sendai, Japan
fYear :
1978
fDate :
4-6 Dec. 1978
Firstpage :
676
Lastpage :
679
Abstract :
Junction type static induction transistor is designed as normally-off device, called as bipolar mode static induction transistor (BSIT), where the channel is completely pinched off by the gate to channel built-in voltage, resulting in an appearance of potential barrier in the channel. Basic properties of BSIT are discussed theoretically and experimentally. Possibilities of high current and high speed switching performance of BSIT has been demonstrated experimentally by using the sample having a cell size of 800 × 520 µm2mounted in a high frequency package.
Keywords :
Capacitance; Communication switching; Current-voltage characteristics; FETs; Frequency; Impurities; Packaging; Temperature; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1978 International
Conference_Location :
Washigton, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1978.189509
Filename :
1479934
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3554772
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