Title :
Process statistics of submicron MOSFET´s
Author :
Demoulin, Eric ; Field, James A Green ; Dutton, Robert W. ; Chatterjee, P.K. ; Tasch, A.F., Jr.
Author_Institution :
Universite Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
Results of experimental measurements and 2D computer modeling for submicron MOSFET´s are presented. Statistical measurements are shown for MOSFET´s with masked channel lengths ranging from 10.2 to 1.3 microns. It is shown by means of two-dimensional device analysis that the observed statistics are a result of both the design parameters such as junction profiles and variations in Leffdue to process control.
Keywords :
Integrated circuit measurements; Integrated circuit modeling; Least squares methods; Length measurement; MOSFETs; Process control; Silicon; Statistics; Tellurium; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189532
