• DocumentCode
    3554833
  • Title

    Process statistics of submicron MOSFET´s

  • Author

    Demoulin, Eric ; Field, James A Green ; Dutton, Robert W. ; Chatterjee, P.K. ; Tasch, A.F., Jr.

  • Author_Institution
    Universite Catholique de Louvain, Louvain-la-Neuve, Belgium
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    34
  • Lastpage
    37
  • Abstract
    Results of experimental measurements and 2D computer modeling for submicron MOSFET´s are presented. Statistical measurements are shown for MOSFET´s with masked channel lengths ranging from 10.2 to 1.3 microns. It is shown by means of two-dimensional device analysis that the observed statistics are a result of both the design parameters such as junction profiles and variations in Leffdue to process control.
  • Keywords
    Integrated circuit measurements; Integrated circuit modeling; Least squares methods; Length measurement; MOSFETs; Process control; Silicon; Statistics; Tellurium; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189532
  • Filename
    1480397
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554833