Title :
Power MOSFET technology
Author :
Lidow, A. ; Herman, T. ; Collins, H.W.
Author_Institution :
International Rectifier Corporation, El Segundo, California
Abstract :
The recent development of high performance power MOSFET´s threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET´s exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large avalanche current capability. Near term improvements now under development suggest that power MOSFET´s will have a dominant position in the 500 Volt and under power control market.
Keywords :
Bipolar transistors; Bonding; Breakdown voltage; Clamps; Diodes; Insulation; MOSFET circuits; Power MOSFET; Silicon on insulator technology; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189545
