Title :
A 1 µm bipolar VLSI technology
Author :
Evans, S.A. ; Morris, S.A. ; Englade, J. ; Fuller, C.R. ; Arledge, L.A.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas, USA
Abstract :
A 1 µm VLSI process technology has been developed for the fabrication of bipolar circuits. The process employs e-beam slice writing, plasma processing, ion implantation and low temperature diffusion/annealing to fabricate bipolar device structures with a minimum feature size of 0.9 µm. The process has been demonstrated by building a scaled LSI, I2L microprocessor chip (SBP0400) with a minimum feature size of 1 µm. The process technology is discussed; I2L performance and density as a function of minimum line width is given.
Keywords :
Annealing; Circuits; Fabrication; Ion implantation; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Very large scale integration; Writing;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Conference_Location :
Washington, DC, USA
DOI :
10.1109/IEDM.1979.189577
