DocumentCode
3554897
Title
High voltage thin layer devices (RESURF devices)
Author
Appels, J.A. ; Vaes, H.M.J.
Author_Institution
Philips Research Laboratories, Eindhoven, The Netherlands
Volume
25
fYear
1979
fDate
1979
Firstpage
238
Lastpage
241
Abstract
The application of a somewhat unusual diode structure opens the possibility to make novel kinds of high voltage devices even with very thin epitaxial or implanted layers. In the new structures crucial changes in the electric field distribution take place at or at least near the surface. The acronym RESURF (REduced SURface Field) was chosen.
Keywords
Bipolar transistors; Breakdown voltage; Conductivity; Diodes; Doping; Electric breakdown; Epitaxial layers; Laboratories; P-n junctions; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189589
Filename
1480454
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