The reduction of emitter-collector shorts in a high speed, all implanted, bipolar technology

One of the main yield limiting mechanisms in the fabrication of shallow junction bipolar integrated circuits is emitter to collector leakage. This paper describes the progress made in reducing the E-C leakage defect density in an all implanted integrated circuit technology, which features emitters ∼0.5 µm deep and bases ∼0.3 µm wide. The median emitter to collector short density was reduced from ∼2×10⁴to ∼200/cm²of active emitter area in the course of this study.