Title :
High density CMOS processing for a 16K-bit RAM
Author :
Nozawa, H. ; Nishimura, S. ; Horiike, Y. ; Okumura, K. ; Iizuka, H. ; Kohyama, S.
Author_Institution :
TOSHIBA Corporation, Kawasaki, Japan
Abstract :
A high density CMOS process has been designed, characterized and optimized for a 16K-bit static RAM application with the standard six-transistor cell configuration. Electron beam lithography was applied for the mask making, and various dry etching technique was introduced for a finer pattern formation including a contact window cut. Fabrication and characteristics of the device elements and a new 16K(2K × 8) bit CMOS RAM are described.
Keywords :
Boron; CMOS process; Conductivity; Doping; MOS devices; MOSFETs; Process design; Read-write memory; Research and development; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189627
