• DocumentCode
    3554939
  • Title

    High density CMOS processing for a 16K-bit RAM

  • Author

    Nozawa, H. ; Nishimura, S. ; Horiike, Y. ; Okumura, K. ; Iizuka, H. ; Kohyama, S.

  • Author_Institution
    TOSHIBA Corporation, Kawasaki, Japan
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    366
  • Lastpage
    369
  • Abstract
    A high density CMOS process has been designed, characterized and optimized for a 16K-bit static RAM application with the standard six-transistor cell configuration. Electron beam lithography was applied for the mask making, and various dry etching technique was introduced for a finer pattern formation including a contact window cut. Fabrication and characteristics of the device elements and a new 16K(2K × 8) bit CMOS RAM are described.
  • Keywords
    Boron; CMOS process; Conductivity; Doping; MOS devices; MOSFETs; Process design; Read-write memory; Research and development; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189627
  • Filename
    1480492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554939