Title :
Fabrication and microwave performance of the permeable base transistor
Author :
Bozler, C.O. ; Alley, G.D. ; Murphy, R.A. ; Flanders, D.C. ; Lindley, W.T.
Author_Institution :
Massachusetts Institute of Technology, Lexington, Massachusetts
Abstract :
A new transistor with the potential for extremely high frequency performance has been fabricated. A two-dimensional numerical simulation has indicated that a transistor with a maximum frequency of oscillation approaching 1000 GHz is achievable. The unique feature of this device is an extremely fine tungsten grating which is embedded inside a single crystal of n-type gallium arsenide.
Keywords :
Electron emission; Fabrication; Frequency; Gallium arsenide; Gratings; Microwave transistors; Poisson equations; Schottky barriers; Substrates; Tungsten;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189632
